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| DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 PMEG2005AEA; PMEG3005AEA; PMEG4005AEA Very low VF MEGA Schottky barrier rectifiers Product specification 2003 Aug 20 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers FEATURES * Very low forward voltage * High surge current * Very small plastic SMD package. APPLICATIONS * Low voltage rectification * High efficiency DC/DC conversion * Voltage clamping * Inverse polarity protection * Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. PMEG2005AEA; PMEG3005AEA; PMEG4005AEA QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage PMEG2005AEA PMEG3005AEA PMEG4005AEA PINNING PIN 1 2 DESCRIPTION cathode anode 20 30 40 V V V MAX. 0.5 UNIT A olumns 1 k 2 a MAM283 The marking bar indicates the cathode. Fig.1 Simplified outline (SOD323; SC-76) and symbol. MARKING TYPE NUMBER PMEG2005AEA PMEG3005AEA PMEG4005AEA RELATED PRODUCTS TYPE NUMBER PMEGxx05AEV PMEG2005EB PMEG2010EA DESCRIPTION 0.5 A; 20 V very low VF MEGA Schottky rectifier 1 A; 20 V very low VF MEGA Schottky rectifier FEATURE smaller SOD523 (SC-79) package higher forward current MARKING CODE E5 E4 E3 0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier SOT666 package 2003 Aug 20 2 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA; PMEG4005AEA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR PARAMETER continuous reverse voltage PMEG2005AEA PMEG3005AEA PMEG4005AEA IF IFRM IFSM Tj Tamb Tstg Notes 1. Refer to SOD323 (SC-76) standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Notes 1. Refer to SOD323 (SC-76) standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 x 10 mm. 4. Solder point of cathode tab. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS in free air; notes 1 and 2 in free air; notes 2 and 3 note 4 VALUE 450 210 90 UNIT K/W K/W K/W continuous forward current repetitive peak forward current non-repetitive peak forward current junction temperature operating ambient temperature storage temperature note 1 tp 1 ms; 0.5 tp = 8 ms; square wave note 2 note 2 - - - - - - - -65 -65 20 30 40 0.5 3.5 10 150 +150 +150 V V V A A A C C C CONDITIONS MIN. MAX. UNIT 2003 Aug 20 3 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. PMEG2005AEA; PMEG3005AEA; PMEG4005AEA PMEG2005AEA PMEG3005AEA PMEG4005AEA SYMBOL VF PARAMETER forward voltage CONDITIONS TYP. IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IR continuous reverse current VR = 10 V; note 1 VR = 20 V; note 1 VR = 30 V; note 1 VR = 40 V; note 1 Cd Note 1. Pulse test: tp 300 s; 0.02. diode capacitance VR = 1 V; f = 1 MHz 90 150 210 280 355 15 40 - - 66 MAX. 130 190 240 330 390 40 200 - - 80 TYP. 90 150 215 285 380 12 - 40 - 55 MAX. 130 200 250 340 430 30 - 150 - 70 TYP. 95 155 220 295 420 7 - - 30 43 MAX. 130 210 270 350 470 20 - - 100 50 mV mV mV mV mV A A A A pF UNIT 2003 Aug 20 4 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers GRAPHICAL DATA 103 handbook, halfpage IF (mA) 102 MDB675 PMEG2005AEA; PMEG3005AEA; PMEG4005AEA 105 handbook, halfpage IR (A) (1) MDB676 104 (1) (2) (3) 103 (2) 10 102 1 10 (3) 10-1 0 0.2 0.4 VF (V) 0.6 1 0 PMEG2005AEA (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. 5 10 15 VR (V) 20 PMEG2005AEA (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 150 MDB677 Cd (pF) 100 50 0 0 5 10 15 VR (V) 20 PMEG2005AEA f = 1 MHz; Tamb = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 5 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA; PMEG4005AEA 103 handbook, halfpage IF (mA) 102 MDB672 105 handbook, halfpage IR (A) (1) MDB673 104 (1) (2) (3) 103 (2) 10 102 1 10 (3) 10-1 0 0.2 0.4 VF (V) 0.6 1 0 10 20 VR (V) 30 PMEG3005AEA (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. PMEG3005AEA (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.5 Forward current as a function of forward voltage; typical values. Fig.6 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 120 MDB674 Cd (pF) 80 40 0 0 5 10 15 VR (V) 20 PMEG3005AEA f = 1 MHz; Tamb = 25 C. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 6 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA; PMEG4005AEA 103 handbook, halfpage IF (mA) 102 MDB669 105 handbook, halfpage IR (A) (1) MDB670 104 (1) (2) (3) 103 (2) 10 102 1 10 (3) 10-1 0 0.2 0.4 VF (V) 0.6 1 0 PMEG4005AEA (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. 10 20 30 VR (V) 40 PMEG4005AEA (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.8 Forward current as a function of forward voltage; typical values. Fig.9 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 100 Cd (pF) 80 MDB671 60 40 20 0 0 5 10 15 VR (V) 20 PMEG4005AEA f = 1 MHz; Tamb = 25 C. Fig.10 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 7 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers PACKAGE OUTLINE Plastic surface mounted package; 2 leads PMEG2005AEA; PMEG3005AEA; PMEG4005AEA SOD323 Q A A1 c Lp HE vMA D A 1 E bp 2 (1) 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max. + 0.05 - 0.05 bp 0.40 0.25 c 0.25 0.10 D 1.8 1.6 E 1.35 1.15 HE 2.7 2.3 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD323 REFERENCES IEC JEDEC EIAJ SC-76 EUROPEAN PROJECTION ISSUE DATE 98-09-14 99-09-13 2003 Aug 20 8 Philips Semiconductors Product specification Very low VF MEGA Schottky barrier rectifiers DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development PMEG2005AEA; PMEG3005AEA; PMEG4005AEA DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Aug 20 9 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp10 Date of release: 2003 Aug 20 Document order number: 9397 750 11615 |
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